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SrWO_4薄膜的电化学制备及室温光致发光特性 被引量:2

Electrochemical preparation of SrWO_4 film and its photoluminescence properties at room temperature
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摘要 在室温条件下,采用恒电流电化学方法直接在钨片基体上制备了白钨矿结构的SrWO4晶态薄膜。电化学反应的工艺参数为:电流密度为1mA/cm2、电解液的pH值为12.5、电化学处理时间为1.5h。采用XRD、SEM、XPS技术对制备的SrWO4薄膜进行了表征;首次测试了制备的SrWO4薄膜的室温光致发光光谱,结果表明SrWO4薄膜受到波长为325nm的激光激发后,在400nm附近有一较强的发射光谱,同时在450~580nm波段之间有一个宽的谱带。 Crystallized SrWO4 thin films with scheelite-structure were prepared directly on tungsten substrate by using constant current electrochemical method at room temperature. The parameters of the electrochemical reaction were controlled as: current density was 1 mA/cm2; the pH value of electrolytes was 12.5 and the duration of electrochemical treatment was 1.5 h. The as-grown thin films were characterized by using XRD, SEM and XPS respectively. At room temperature, the photoluminescence properties of as-grown SrWO4 thin films were measured for the first time, the test results show that SrWO4 thin film emits a stronger spectrum in about 400 nm with a couple of serial weaker spectra in the range of 450-580 nm when it was excited by 325 nm laser.
出处 《功能材料》 EI CAS CSCD 北大核心 2005年第5期711-713,716,共4页 Journal of Functional Materials
基金 国家自然科学基金重大国际合作资助项目(50410179) 国家自然科学基金面上资助项目(50372042) 霍英东青年教师基金资助项目(94008)。
关键词 SrWO4薄膜 电化学制备 白钨矿结构 光致发光 Crystalline materials Current density Electrochemistry Morphology Photoelectricity Photoluminescence Scanning electron microscopy Strontium compounds Substrates Tungsten X ray diffraction analysis X ray photoelectron spectroscopy
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