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半导体工业中临界尺寸线边缘粗糙度的测量 被引量：5

Line-edge-roughness measurement of critical-dimensions in semiconductor fabrication industry
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摘要 详细论述了刻线边缘粗糙度问题的产生原因,线边缘粗糙度的定义以及目前采用的测量方法和分析方法,比较了线边缘粗糙度的测量工具,并讨论了测量线边缘粗糙度的技术障碍. The background (reason) why line edge roughness is raised up, as well as the definition of line edge roughness according to ITRS is discussed. The current measurement and analysis method on line edge roughness are introduced and the measurement tools are compared. The technical barrier on the line edge roughness measurement is discussed also.
作者 李洪波 赵学增 褚巍 肖增文
机构地区 哈尔滨工业大学机电工程学院
出处 《哈尔滨工业大学学报》 EI CAS CSCD 北大核心 2005年第5期674-678,共5页 Journal of Harbin Institute of Technology
关键词 纳米 侧墙粗糙度 线边缘粗糙度 原子力显微镜 Atomic force microscopy Nanotechnology Roughness measurement
分类号 TG84 [金属学及工艺—公差测量技术] TH161 [机械工程—机械制造及自动化]
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参考文献20

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同被引文献69

  • 1李洪波,赵学增,肖增文,褚巍,王凌.一种基于图像处理的半导体刻线边缘粗糙度的确定方法[J].计量技术,2004(9):3-5. 被引量：4
  • 2赵学增,李洪波,褚巍,肖增文,李宁.基于计量学的线边缘粗糙度定义[J].机械工程学报,2007,43(1):214-218. 被引量：4
  • 3Metrology 2007. The Semiconductor Industry Association[ EB/ OL]. http://public. itrs. net, 2008.
  • 4Bishop M R, Bunday B, Villarrubia J S, et al. CD- SEM Measurement of Line Edge Roughness Test Patterns for 193 nm Lithography [ J ]. Proceedings of SPIE, 2003, ( 5038 ) : 674 - 688.
  • 5Yoshizawa M. Resolution limiting mechanism in electron beam hthography[J]. Electronics Letters, 2000, 36( 1): 90 -91.
  • 6Shin J. Line edge roughness study of next generation lithography: carbon nanotubes application to subhundred rranomerter pattem metrology [ D ]. Madison: University of Wisconsin - Madison, 2003.
  • 7Patsis G P, Constantoudis V, Tserepi A, et al. Roughness analysis of lithographically produced nanostructures: off line measurement, scaling analysis and monte carlo simulations [ EB/OL]. http://cgi. di. uoa. gr, 2008.
  • 8Winkelmeier S, Sarstedt M, Ereken M, et al. Metrology method for the correlation of hne edge roughness for different resists before and after etch[ J]. Microelectronic Engineering, 2001, (57 - 58) : 665 - 672.
  • 9Sundaram G, Lee B H, Mai T, et a!. Minimizing the impact of image acquisition on CD - SEM LER/LWR measurements[ J ]. Proceedings of SPIE, 2005, (5752): 1277- 1282.
  • 10Matsui M, Machida S, Todokoro H, et d. Observation of subsurface structures using high - energy SEM[J ]. Proceedings of SPIE, 2005, (5752) : 798 - 806.

引证文献5

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哈尔滨工业大学学报
2005年 第5期

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