摘要
The CuO doped with 5%20% Mn（molar fraction） solids were sintered from CuO and MnO2 powder at high temperature （1 273 K） for 8 h. X-ray diffraction was used to determine the solid crystallinity and to address the formation of secondary phases. It is found that it is difficult to achieve pure Cu1-xMnxO phase using standard solid phase reaction. However, sintering under a pressure of 27.7 MPa significantly reduces the undesirable second phase CuMn2O4, providing a route to achieve pure Cu1-xMnxO phase. SQUID magnetometry was employed to characterize the magnetic properties. Mn-doped CuO presents ferromagnetic characteristics below 70 K. Electrical transport properties were measured in a current-perpendicular-to-plane（CPP） geometry using the PPMS, which suggests variable-range hopping mechanism.
The CuO doped with 5%20% Mn(molar fraction) solids were sintered from CuO and MnO_2 powder at high temperature (1 273 K) for 8 h. X-ray diffraction was used to determine the solid crystallinity and to address the formation of secondary phases. It is found that it is difficult to achieve pure Cu_(1-x)Mn_xO phase using standard solid phase reaction. However, sintering under a pressure of 27.7 MPa significantly reduces the undesirable second phase CuMn_2O_4, providing a route to achieve pure Cu_(1-x)Mn_xO phase. SQUID magnetometry was employed to characterize the magnetic properties. Mn-doped CuO presents ferromagnetic characteristics below 70 K. Electrical transport properties were measured in a current-perpendicular-to-plane(CPP) geometry using the PPMS, which suggests variable-range hopping mechanism.
出处
《中国有色金属学会会刊：英文版》
CSCD
2005年第2期349-352,共4页
Transactions of Nonferrous Metals Society of China
基金
Projects(50472092
50325209
50232030) supported by the National Natural Science Foundations of China
关键词
氧化铜
磁学性质
锰
掺杂效应
铁磁半导体
固态晶体
Mn-doped CuO
diluted magnetic semiconductor
solid crystallinity
hopping mechanism
