摘要
Effects of Cu underlayer on the structure of Fe50Mn50 films were studied. Samples with a structure of Fe50Mn50（200 nm）/ Cu(tCu) were prepared by magnetron sputtering on thermally oxidized silicon substrates at room temperature. The thickness of Cu underlayer varied from 0 to 60 nm in the intervals of 10 nm. High-vacuum annealing treatments, at different temperatures of 200, 300 and 400 ℃ for 1 h, respectively, on the Fe50Mn50（200 nm）/ Cu（20 nm） thin films were performed. The surface morphologies and textures of the samples were measured by field emission scan electronic microscope （FE-SEM） and X-ray diffraction（XRD）. Energy dispersive X-ray spectroscopy （EDX） and Auger electron spectroscopy（AES） were used to analyze the compositional distribution. It is found that Cu underlayer has an obvious induce effect on （111） orientation of Fe50Mn50 thin films. The induce effects of Cu on （111） orientation of Fe50Mn50 changed with the increase of Cu layer thickness and the best effect was obtained at the Cu layer thickness of 20 nm. High-vacuum annealing treatments cause the migration of Mn atoms towards surface of the film and interface between Cu layer and substrate. With the increasing annealing temperature, migration of Mn atoms is more obvious, which leads to a Fe-riched Fe-Mn alloy film.
Effects of Cu underlayer on the structure of Fe_(50)Mn_(50) films were studied. Samples with a structure of Fe_(50)Mn_(50)(200 nm)/ Cu(t_(Cu)) were prepared by magnetron sputtering on thermally oxidized silicon substrates at room temperature. The thickness of Cu underlayer varied from 0 to 60 nm in the intervals of 10 nm. High-vacuum annealing treatments, at different temperatures of 200, 300 and 400 ℃ for 1 h, respectively, on the Fe_(50)Mn_(50)(200 nm)/ Cu(20 nm) thin films were performed. The surface morphologies and textures of the samples were measured by field emission scan electronic microscope (FE-SEM) and X-ray diffraction(XRD). Energy dispersive X-ray spectroscopy (EDX) and Auger electron spectroscopy(AES) were used to analyze the compositional distribution. It is found that Cu underlayer has an obvious induce effect on (111) orientation of Fe_(50)Mn_(50) thin films. The induce effects of Cu on (111) orientation of Fe_(50)Mn_(50) changed with the increase of Cu layer thickness and the best effect was obtained at the Cu layer thickness of 20 nm. High-vacuum annealing treatments cause the migration of Mn atoms towards surface of the film and interface between Cu layer and substrate. With the increasing annealing temperature, migration of Mn atoms is more obvious, which leads to a Fe-riched Fe-Mn alloy film.
出处
《中国有色金属学会会刊：英文版》
CSCD
2005年第2期353-357,共5页
Transactions of Nonferrous Metals Society of China
基金
Project(19974005) supported by the National Natural Science Foundation of China
