摘要
建立了6H SiC材料和器件模型,应用二维器件仿真软件MEDICI对所设计的亚微米6H SiC CMOS倒相器的温度特性进行了研究.研究结果表明,该倒相器在600K的高温下仍可以正常工作,且具有良好的电压转移特性和瞬态特性;在300~600K的温度范围内,倒相器阈值电压由1.218V变化到1.274V,变化幅度较小.
Based on the relevant models of 6H-SiC material and devices, the temperature properties of the submicron 6H-SiC CMOS inverter proposed in this paper are investigated with the 2-Dimensional device simulator MEDICI. Simulation results show that the inverter can operate at 600 K and has better voltage transfer and transient characteristics. The calculated switching threshold voltage of the inverter varies from 1.218 V to 1.274 V in the temperature range of 300-600 K with a 5 V power supply and its change is not significant. All this provides a valuable reference for the design of and the research on more complicated high temperature 6H-SiC CMOS circuits.
出处
《西安电子科技大学学报》
EI
CAS
CSCD
北大核心
2005年第3期396-399,共4页
Journal of Xidian University
基金
教育部重点资助项目(02074)
国家部委科技预研基金资助项目
关键词
6H-SIC
CMOS倒相器
温度特性
电压转移
阈值电压
CMOS integrated circuits
Semiconducting silicon
Silicon carbide
Temperature
Threshold voltage
Two dimensional