基于自对准和空气桥工艺的SiGe HBT研究

Study of the SiGe HBT based on the self-alignment and air-bridge

采用基区及发射区自对准和空气桥技术,降低了SiGe异质结晶体管器件的基极电阻及集电极和基极之间的结电容,提高了SiGe异质结晶体管器件的最高振荡频率fmax.以分子束外延SiGe材料为基础,研制出了SiGe异质结晶体管器件,取得了fmax为124.2GHz的结果.

By using base-emitter self-alignment and air-bridge technology, the base resistance of SiGe heterojunction bipolar transistors(HBT) together with the capacitance between collector and base is reduced; in addition, the maximum oscillation frequency (fmax) is improved. In this paper, SiGe HBT fmax of 124.2 GHz has been obtained based on MBE SiGe materials.