摘要
Design,realization,and test of a monolithic GaAs 3bit phase digitizing DAC for 3bit digital radio-frequency memory are detailedly described.The 0.5μm fully ion-implanted GaAs MESFET is used to fabricate the circuit in Nanjing Electronic Devices Institute’s (NEDI’s) 75mm standard process line.The high-speed DAC is designed with on-wafer 50Ω I/O impedance matching.Test results show that its work bandwidth is more than 1.5GHz,and phase accuracy is better than 4%.Its code conversion rate can be higher than 12Gbps.
详细论述了用于数字射频存储器系统的单片超高速GaAs 3bit相位DAC的设计、制造及测试.在南京电子器件研究所标准75mm GaAs工艺线采用0. 5μm全离子注入MESFET工艺完成流片.芯片输入输出阻抗实现在片50Ω匹配.测试结果表明,其工作带宽大于1. 5GHz,相位精度小于4%,电路的码流翻转速率大于12Gbps.
