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渐变带隙结构在Ⅲ-Ⅴ族太阳电池中的应用 被引量:4

Research on Ⅲ-Ⅴ Bandgap Graded Solar Cells
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摘要 在分析半导体带隙的渐变结构理论的基础上,研究了具有渐变带隙结构太阳电池的普遍规律和特点,采用AMPS软件结合相关试验参数对ⅢⅤ族的AlxGa1-xAs类太阳电池中渐变带隙结构进行了计算模拟,并与普通电池进行了对比分析.一方面,带宽的递增或递减构成的势垒可以形成附加电场,帮助少子收集,增加少子寿命;另一方面,渐变后的带隙会影响实际光谱的吸收效率,使得总的载流子产额以及可利用部分发生变化,总结出带隙的渐变结构对载流子实际产生、收集等情况有着多方面的调制作用. This paper presents a theoretical analysis for s olar cells with a graded bandgap structure.The impacts of graded bandgap structures on the performances of Ⅲ/Ⅴ compound Al xGa 1-x As solar cells are simulated using AMPS model developed at Penn State University with a set of practical parameters.Investigation and comparison for several different graded bangdap solar cells are carried out,and the modulation effects of graded bangdgap on the generation and collection of minority carriers are demonstrated.
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2005年第5期958-964,共7页 半导体学报(英文版)
基金 上海市科委重大攻关项目(批准号:03bz14014)资助
关键词 太阳电池 渐变带隙 载流子产生 载流子收集 solar cell bandgap graded generation aided collection aided
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参考文献11

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共引文献8

同被引文献170

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