基于FC技术的AlGaN/GaN HEMT

AlGaN/GaN HEMT on Sapphire Using FC Bonding

采用FC技术将管芯倒扣至AlN基板散热的AlGaN/GaN HEMTs,并通过热阻模型分析了FC方式的散热机理.从测试结果看,器件的热阻可大幅降到14 .9K·mm/W,直流特性明显增加,饱和电流提高33%.表明采用FC技术有效改善了器件散热,而且引入的寄生电感较小,可获得更大输出功率.如果进一步完善频率特性的优化,可以加快FC技术的AlGaN/GaN大功率HEMT器件的实用化进程.

AlGaN/GaN HEMT grown on sapphire substrates using FC bonding for heat dissipation is demonstrated and the mechanism of FC bonding is discussed.A model based on thermal impedance is used to analyze the heat which is dissipated by FC bonding.The tested result shows,after FC,a much reduced thermal impedance of 14.9W/(cm·K),and a increased saturation current from 300mA/mm to 396mA/mm are obtained.Source-drain current drop in high DC power is not obviously observed in FC FET.So the AlGaN/GaN HEMT using FC bonding has good heat-dissipation performance and large output power.