摘要
采用一种新的简化VBIC模型对单、多指InGaP/GaAs HBT器件进行建模.测量和模型仿真I -V特性及其在多偏置条件下多频率点S 参数对比结果表明,DC^9GHz频率范围内,简化后的模型可对InGaP/GaAsHBT交流小信号特性进行较好的表征.利用建立的模型设计出DC^9GHz两级直接耦合宽带放大器,该放大器增益达到19dB,输入、输出回波损耗分别低于-10dB和-8dB.
A new simplified VBIC model for a single- or a multi-finger InGaP/GaAs HBT is presented.Compared results between measured and simulated data verify that,within the frequency range from 50MHz to 9GHz,this simplified model is suitable for InGaP/GaAs HBT AC small-signal characterizations’ representation.Using this model developed,a two-stage direct-coupled wideband amplifier has been designed with measured gain of 19dB up to 9GHz,the input return-loss of less than -10dB, the output return-loss of less than -8dB.
基金
国家自然科学基金资助项目(批准号:90207007)~~
