摘要
对三沟道BCCD(bulk charge coupled device)在近红外光区的光电特性进行了研究.结果表明,锗制的三沟道BCCD不能在近红外光区实现多光谱成像.通过理论分析,找到了一种能保证BCCD在近红外光区工作的衬底材料应满足的吸收曲线.数值模拟结果表明:利用这种新材料制成的三沟道BCCD,其光敏特性曲线可以分别在1 .0,1. 1和1. 26μm处出现最大值.
The photoelectric characteristics of three-chann el bulk charge-coupled device (BCCD) are simulated in the region of near-IR.The results show that the germanium three-channel BCCD can not realize multispectral imaging in the region of near-IR.Basing on the result of theoretical research,the absorption coefficient curve of a new substrate material is found,which can realize multispectral imaging in the region of near-IR.The simulating results show that the spectral photosensitivity of three-channel BCCD made by the new material has three maximal positions at 1.0,1.1 and 1.26μm,respectively.
关键词
体电荷耦合器件
光敏特性
多光谱成像
bulk charge-coupled devices
photosensitivity
multispectral imaging
