摘要
开发了单晶硅上的选择性无电镀铜、镀镍工艺,形成了较为优化的施镀流程,实现了保形性、均镀性较好的铜、镍及其复合镀层.其中针对单晶硅表面的特点,采取了浓酸处理和氧等离子轰击两种表面预处理方法,优化了氯化钯对表面的激活时间,使得镀层质量得到提高.提出了以镍作为中间层以减小镀层应力的方法,施镀后获得的铜镀层的电阻率为2. 1μΩ·cm,铜/镍复合镀层的方块电阻为0. 19Ω/□.在单晶硅MEMS电感结构上实现了较好的无电镀铜,使得该元件的品质因数超过25.
The process of electroless copper and nickel pla ting on single-crystal silicon is developed.In the process,two pretreatment methods,acid immersion and oxygen plasma bombardment,are applied to improve the quality of plated film.The activation time using palladium chloride is optimized.The stress in plated copper/nickel film can be reduced using of nickel as an interface layer.Through an optimal processing flow obtained,the copper film with ρ=2.1μΩ·cm as well as copper/nickel compound film with 0.19Ω/□ are plated successfully on single-crystal silicon surface,respectively.The achieved films also have good coverage.The single-crystal-silicon MEMS inductors are well plated by electroless copper and nickel plating,and their quality factors exceed 25.
基金
国家自然科学基金资助项目(批准号:90307007)~~
关键词
单晶硅
无电镀
铜
镍
MEMS电感
品质因数
single-crystal silicon
electroless plating
copper
nickel
MEMS inductor
quality factor
