FeCuCrVSiB多层膜巨磁阻抗效应的研究

Study on the giant magnetoimpedance effect of FeCuCrVSiB multilayered films

研究了结构为(FM SiO2)3Ag(SiO2FM)3多层膜的巨磁阻抗(GMI)效应(这里的FM≡FeCuCrVSiB).多层膜采用射频溅射法沉积在单晶Si衬底上,沉积过程中,沿膜面长方向施加约72kA m的磁场,然后在不同的温度下对样品进行了退火处理.结果表明,该多层膜样品即使在沉积态便具有相当好的软磁性能和GMI效应,在7MHz的频率下,最大纵向和横向巨磁阻抗比分别为45%和44%.在230℃下经90min退火处理后的样品具有最佳的GMI效应,在8.5MHz的频率下,最大纵向和横向巨磁阻抗比分别达到251%和277%.与磁性层总厚度相同的FeCuCrVSiB Ag FeCuCrVSiB三层膜相比较,在这种多层结构中出现的GMI效应更强.

Giant magneto-impedance (GMI) effect of a multilayered film with the structure of (FM/SiO2)(3)/Ag/(SiO2/FM)(3) (FM equivalent to FeCuCrVSiB) was studied. The multilayered film was deposited by radio frequency sputtering onto a single crystal Si substrate. A constant magnetic field of about 72kA/m was applied along the longitudinal direction of the film plane during deposition process, and then the samples were annealed at different temperatures. Results obtained show that the multilayered film has good soft magnetic properties and GMI effect even though in the as-deposited state. The maximum magnetoimpedance ratios are about 45% and 44% in longitudinal and transverse cases, respectively. After the samples were annealed at 230 degrees C for 90min, the best GMI effect could be obtained. The maximum longitudinal and transverse magnetoimpedance ratio up to 251% and 277% were obtained at the frequency of 8.5MHz, respectively. The GMI effect in this multilayered structure is much stronger than the one in FeCuCrVSiB/Ag/FeCuCrVSiB sandwiched film with the same thickness of total magnetic layers.