多岛单电子晶体管的实现及其源漏特性分析

Realization and output characteristics analysis of the multiple islands single-electron transistors

在淀积有纳米间隙栅电极、源电极和漏电极的衬底上生长量子点 ,制作出多岛结构的单电子晶体管 .在 77K温度下对源漏特性进行了测试 ,得到了库仑阻塞特性 .并且成功抑制了单岛单电子晶体管中易出现的共隧穿效应 ,观察到较大的库仑阈值电压 .对试验数据进行了分析 ,阐明了岛的不同结构组态产生的不同输运效果 .

In this paper, a new kind of multiple islands single-electron transistor is prepared successfully with indium quantum dots deposited among nanometer-gap electrodes. The output characteristics are tested and the Coulomb blockade effects are observed. As a result, the harmful co-tunneling effects occurring usually in the single island single-electron transistors are weakened significantly, and a big threshold voltage is got. At the end of the paper, the different transport states from source to drain are discussed.