二次离子质谱深度剖面分析氢化微晶硅薄膜中的氧污染

Secondary ion mass spectroscopic depth profile analysis of oxygen contamination in hydrogenated microcrystalline silicon

运用二次离子质谱研究了甚高频等离子体增强化学气相沉积制备的不同硅烷浓度和功率条件下薄膜中的氧污染情况 .结果发现 :薄膜中的氧含量随硅烷浓度和功率的变化而改变 .制备的微晶硅薄膜 ,晶化程度越高薄膜中的氧含量相对越多 .另外 ,不同本底真空中的氧污染实验结果表明 :微晶硅材料中的氧含量与本底真空有很大的关系 ,因此要制备高质量的微晶硅材料 ,高的本底真空是必要条件 .

Oxygen contamination of samples fabricated by very high-frequency plasma-enhanced chemical vapor deposition with the variation of silane concentration and discharge power was studied by secondary ion mass spectroscopy. The results showed that oxygen content in the samples depended strongly on the silane concentration and discharge power. Microcrystalline silicon thin films with higher crystalline volume fraction has relatively higher oxygen content. Oxygen contamination of samples was also related with the background vacuum, especially for microcrystalline silicon thin films. Therefore, higher background vacuum is extremely necessary in the fabrication of high-quality microcrystalline silicon thin films.