摘要
本文比较了两种可控硅整流电路,在这两种电路中把反并联可控硅接入阳极变压器。文章介绍了电路的过压和过流的保护方法并给出了电路的计算公式和经验数据。
This paper compares two silicon-controlled rectifier circuits. An inverse parallelcontrolled silicon is connected with the anode transformer in these circuits. The protective methods of the over voltage and over current of the circuit areintroduced and some calculated formulae and experimental data for the rectifier areprovided.
出处
《武汉测绘科技大学学报》
CSCD
1989年第2期75-81,共7页
Geomatics and Information Science of Wuhan University
关键词
可探硅
整流
电路
反并联
同步
silicon-controlled rectifier
inverse parallel
synchronism