B型缓冲电路用于MOSFET逆变器的仿真分析

Simulation of B Snubber Circuit for MOSFET Inverter

针对B型缓冲电路用于以大功率MOSFET为主开关器件的全桥逆变器时所存在的受各种因素影响较大的问题,在缓冲电路组数不同、开关频率不同、负载性质不同以及缓冲电路各参数不同等情况下使用PSpice仿真软件进行仿真,通过仿真波形分析上述各因素对开关管尖峰电压吸收效果的影响,得出了一些有益的结论,对设计B型缓冲电路时有重要的参考价值。

For the problem that performance changes greatly with different outside factors when B snubber circuit applies to the highpower MOSFET fullbridge inverter, under different number of snubber circuit, switch frequency, characteristic of load and circuit parameters, the performance of fullbridge inverter is simulated, and some useful conclusions are reached by analysing the simulation result, which will help design more perfect B snubber circuit.