粉料埋烧的TiO_2瓷半导化和电学非线性研究

Influence of burying sintering process on semi-conductivity and nonlinear properties of TiO_2 varistor ceramics

基于一次烧结工艺,采用埋烧和裸烧两种方法制备组分相同(Sr,Bi,Si,Ta)掺杂的TiO2陶瓷。通过复阻抗特性、晶粒电阻、晶界电阻、压敏电压、非线性系数及势垒高度的测定,研究埋烧与裸烧工艺对TiO2陶瓷的半导化以及电学非线性特性的影响。结果表明,采取粉料埋烧有利于晶粒半导化,降低压敏电压。

Based on the single sinter process, (Sr, Bi, Si, Ta)-added TiO2 multifunction ceramics were fabricated by burying sintering and traditional sintering process respectively. By measuring the properties of R-X, grain resistance, grain boundary resistance, breakdown voltage, nonlinear exponent and barrier height, effects of the burying sintering process on semi-conductivity and nonlinear properties of TiO2 multifunction ceramics were investigated by comparing with that of the traditional sintering process. It was found that the burying sintering process may raise electrical conductivity and make breakdown voltage smaller.