期刊文献+
任意字段
题名或关键词
题名
关键词
文摘
作者
第一作者
机构
刊名
分类号
参考文献
作者简介
基金资助
栏目信息

ICP刻蚀技术与模型 被引量：8

Technology and Models of ICP Etching
下载PDF
导出
摘要 从ICP刻蚀装置、ICP刻蚀技术及模拟模型以及可用于ICP刻蚀模拟的CAD工具研究现状等几方面,对ICP刻蚀过程中所涉及的原理和模型做了较为详细的介绍和比较,以使对ICP刻蚀技术及模型有一个较为全面的认识。 The device and technology of ICP etching,simulation models and CAD tools being applicable for ICP etching are introduced and compared to provide a quite comprehensive expatiation to readers.
作者 张鉴 黄庆安
机构地区 东南大学MEMS教育部重点实验室
出处 《微纳电子技术》 CAS 2005年第6期288-296,共9页 Micronanoelectronic Technology
基金 国家杰出青年科学基金资助课题(50325519)
关键词 ICP刻蚀 等离子体 模型 ICP etching plasma model
分类号 TN43 [电子电信—微电子学与固体电子学]
  • 相关文献

参考文献28

  • 1BLAUW M A, CRACIUN G, SLOOF W G, et al. Advanced time-multiplexed plasma etching of high aspect ratio silicon structures [J] . J Vac Sci Technol, 2002, B 20 (6): 3106.
  • 2CRAIGIE C J D, SHEEHAN T, JOHNSON V N, et al. Polymer thickness effects on Bosch etch profiles [J] . J Vac Sci Technol, 2002, B20 (6): 2229.
  • 3樊中朝,余金中,陈少武.ICP刻蚀技术及其在光电子器件制作中的应用[J].微细加工技术,2003(2):21-28. 被引量：32
  • 4KELLER J, FORSTER J M, BAMES M S. Novel radio frequency plasma processing techniques [J] . J Vac Sci Technol,1993, 11 (5): 2487.
  • 5HOPWOOD J. Review of inductively, coupled plasmas for plasma processing [ J] . Plasma Sources Sci Technol, 1992, 1(2): 109.
  • 6KENICHI NANBU, TAMOTSU MORIMOTO, MASAHARU SUETANI. Direct simulation monte carlo analysis of flows and etch rate in an inductively coupled plasma reactor [J] . IEEE Trans Plasma Sci, 1999, 27 (5): 1379.
  • 7MASAKAZU SHIOZAWA, KENICHI NANBU. Supercomputing of plasma and rarefied flow in an inductively coupled plasma reactor [J] . NEC Res &Develop, 2003, 44 (1): 121.
  • 8MASAKAZU SHIOZAWA, KENICHI NANBU. Particle modeling of inductively coupled plasma and radicals flow to predict etch rate of silicon [J] . Jpn J Appl Phys, 2002, 41 (4A):2213.
  • 9WU HAN MING, YU B W, LI MING, et al. Two-dimensional fluid model simulation of bell jar top inductively coupled plasma [J] . IEEE Trans Plasma Sci, 1997, 25 (1): 1.
  • 10许沭华,任兆杏,沈克明,翁坚.射频ICP离子源设计研究[J].真空科学与技术,2002,22(4):310-312. 被引量：11

二级参考文献29

  • 1[1]OLDHAM W G, NEUREUTHER A R, SUNG C, et al. A general simulator for VLSI lithography and etching process: Part ii -- Application to deposition and etching [J].IEEE Trans Electron Devices, 1980, 27: 1455.
  • 2[2]MCVITTIE J P. J. REY C, CHENG L Y, et al. LPCVD profile simulation using a Re-emission model [A]. IEDM 90[C].1990, 917-920.
  • 3[3]HARAFUJI K, MISAKA A. Dry etching topography simulator with a new surface reaction model: MODERN [J]. IEEE Trans Electron Devices 1995, 42: 1903.
  • 4[4]TAZAWA S, MATSUO S, SAITO K.A General characterization and simulation method for deposition and etching technology [J].IEEE Trans Semicond Manuf, 1992, 5 :27.
  • 5[5]ZHOU R C, ZHANG H X, HAO Y Y, et al. Simulation of profile evolution in etching-polymerization alternation in DRIE of silicon with SF6/C4F8 [A]. MEMS 03 [C]. 2003, 161-164.
  • 6F A Khan, L Zhou, V Kumar, et al. High rate etching of AIN using BCl3/Cl2/Ar inductively coupled plasma[J]. Materials Science and Engineering,2002,B 95:51 - 54.
  • 7J Etrillard, J F Bresse, C Daguet,et al. Low damage dry etching of Ⅲ - V materials for heterojunction bipolar transistor applications using a chlorinated inductively coupled plasma[J]. J Vac Sci Technol, 1999,A 17(4) : 1174 - 1181.
  • 8B Ronga, E van der Drift, R J Reeves, et al. Inductively coupled plamaa etching of CaN and its effect on electrical characteristics[J]. J Vac Sci Technol, 2001,B19(6) : 2917- 2920.
  • 9Y J Lee, S W Hwang, G Y Yeom,et al. Etch- induced damage in single crystal Si trench etching by planar inductively coupled Cl2/N2 and Cl2/HBr plasmas[J ]. Thin Solid Films, 1999, (341) :168- 171.
  • 10S Bretoiu, D Di Mola, E Fioravanti, et al. Inductively coupled plasma etching for arrayed waveguide gratings fabrication in silica on silicon technology[J]. J Vac Sci Technol,2002, B 20(5) :2085 - 2090.

共引文献45

同被引文献66

引证文献8

二级引证文献30

微纳电子技术
2005年 第6期

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部