生产二硅化钼的反应气相渗透新技术

PROCESSING OF MOLYBDENUM DISILICIDE USING A NEW REACTIVE VAPOR INFILTRATION TECHNIQUE

仔细研究了通过低温反应气相渗透途径生产二硅化铝（MOSi_2）的新工艺。在这种工艺中，把松散压制的粉末暴露到气态硅里，首先形成MoSi_2表面层，继而反应逐渐地向内部扩展。在1200℃温度下，MOSi_2层以大约201μm／h的速率增厚，它是高温四方晶相。与化学气相沉积MoSi_2不同的是．它不存在剩余的硅或者钼。

Processing of MoSi2 via a lower-temperature reactive vapor infiltration route is explored. In this process aloosely compacted Mo powder is exposed to gaseous silicon. lnitially, a surface of MoSi2 layer forms and then a distinctreaction moves progres-sively toward the inside. At 1 200 ℃,the silicide alyer grows thickly at a rate of about 20 μm/h. The MoSi2 layer is of the high-temperature tetragonal phase. No excess silicon or Mo silicide.