摘要
钛酸锶钡(BST)高介电常数材料被普遍认为是最有前途的DRAM电容介质材料。BST作为DRAM电容介质材料的研究已有多年,到目前为止取得了不少突破性的进展。介绍了BST的材料特性和堆积型电容结构电极、埋层材料的设计考虑,探讨了BST膜的制备、掺杂及刻蚀工艺技术。
BST thin films,characterized by high permittivity,has been recognized as an ideal material for DRAM capacitor dielectric.The study on BST as the material of DRAM capacitor dielectric began many years ago.So far ,Many important improvements have been achieved.In this paper,The feasibility of BST thin films are described,such are the design considerations for the electrode and barrier materials used in stacked capacitor structures.Technicals of preparation,dope and fabrication processes are presented.
出处
《压电与声光》
CSCD
北大核心
2005年第3期287-290,共4页
Piezoelectrics & Acoustooptics
关键词
钛酸锶钡
动态随机存储器
介质材料
堆积型电容
barium strontium titanate
dynamic random-access memory
dielectric materials
stacked capacitor