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BST材料在DRAM电容中的应用研究 被引量：6

Studies on Applications of BST Thin Film for DRAM Capacitors
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摘要 钛酸锶钡(BST)高介电常数材料被普遍认为是最有前途的DRAM电容介质材料。BST作为DRAM电容介质材料的研究已有多年,到目前为止取得了不少突破性的进展。介绍了BST的材料特性和堆积型电容结构电极、埋层材料的设计考虑,探讨了BST膜的制备、掺杂及刻蚀工艺技术。 BST thin films,characterized by high permittivity,has been recognized as an ideal material for DRAM capacitor dielectric.The study on BST as the material of DRAM capacitor dielectric began many years ago.So far ,Many important improvements have been achieved.In this paper,The feasibility of BST thin films are described,such are the design considerations for the electrode and barrier materials used in stacked capacitor structures.Technicals of preparation,dope and fabrication processes are presented.
作者 肖斌 汪家友 苏祥林 杨银堂
机构地区 西安电子科技大学微电子所
出处 《压电与声光》 CSCD 北大核心 2005年第3期287-290,共4页 Piezoelectrics & Acoustooptics
关键词 钛酸锶钡 动态随机存储器 介质材料 堆积型电容 barium strontium titanate dynamic random-access memory dielectric materials stacked capacitor
分类号 TN304 [电子电信—物理电子学]
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参考文献17

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二级参考文献12

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共引文献16

同被引文献35

引证文献6

二级引证文献4

压电与声光
2005年 第3期

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