摘要
采用CH4+Ar混合等离子体对p-Si(100)进行剂量为5.0×1017cm-2,能量分别为40keV及80keV的碳离子注入,靶温控制在700°C左右;注入后将样品在1250°C的氩气中退火5h。通过红外反射光谱、掠角X-射线衍射以及剖面透射电镜对退火前后的样品进行分析,其结果证明了结晶质量较好的多晶β-SiC不连续埋层的形成。
CH_4+Ar plasma were implanted into p-Si (100) substrates by C^+ ion implantation with a dose of (5.0×10^(17) cm^(-2)) at about 700 °C, followed by high temperature annealing at 1 250 °C in Ar for 5 h. The formation of discrete polycrystalline SiC buried layer was substantiated by Infrared reflection spectroscopy (IRRS), glanced-angle x-ray diffraction (GAXRD) and cross-section transmission electron microscope (XTEM).
出处
《压电与声光》
CSCD
北大核心
2005年第3期328-330,334,共4页
Piezoelectrics & Acoustooptics
基金
中法合作研究基金资助项目(No.PRAMX01-06)
