期刊文献+

利用表面活性剂有效去除ULSI衬底硅片表面吸附颗粒 被引量:3

Removal of Adsorbed Particles on Silicon Wafer Surface by Using Surfactant
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摘要 甚大规模集成电路(ULSI)对衬底硅片表面洁净度的要求越来越高。抑制颗粒在衬底表面的沉积,应使衬底表面与颗粒表面必须具有相同的ξ-电势。表面活性剂具有润湿作用,能够降低表面张力,可以控制颗粒在硅片表面的吸附状态。实验证实在清洗液中加入适当的表面活性剂能够达到较好的去除颗粒的效果,实现工业应用。 The requirement of cleaning level in the fabrication of ULSI increased quickly. The ξ-electric potential between particle and wafer must be the same in order to restrain the sediment of particles. Surfactant can control the adsorption state of particles on wafer surface because it has the ability of wetting and reduction of surface tension. Experiments has approved that solution with surfactant can achieve better cleaning effect and industry application.
出处 《电子器件》 EI CAS 2005年第2期283-285,共3页 Chinese Journal of Electron Devices
基金 天津市重大攻关项目课题 全国中小型企业资助项目。
关键词 ULSI 硅片 吸附 颗粒 活性剂 ULSI silicon wafer adsorption particle surfactant
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  • 1半导体杂志,1997,22(3):55-55.
  • 2Krusell W C, de Larios J M, Zhang J. Mechanical brush scrubbing for post-CMP clean[J]. Solid State Technology,1995,(7):109.
  • 3de Larios J M, Ravkin M, Hetherington D, et al. There and back again[J]. Semiconductor International, 1996,(5):121(126.
  • 4Diane Hymes, Igor Malik . Brush scrubbing emerges as future wafer-cleaning technology[J]. Solid State Technology. 1997, (7):209(214.
  • 5Hymes D J, Malik I J. Double-side Brushing[J]. Micro, 1996,(10):55.
  • 6The National Technology Roadmap for Semiconductors[S]. Semiconductor Industry Association, 1994.
  • 7Itana M, Ohmi J, Kubo M,et al.Minimization of Particle Contamination during Wet Processing of Si Wafers[J]. J. Electrochem Soc,1995, 142(3):971(977.
  • 8曹亚,李惠林,张爱民.CMC型高分子表面活性剂在固/液界面上的吸附[J].物理化学学报,1999,15(10):952-955. 被引量:16
  • 9曹亚,李惠林.高分子表面活性剂在固/液界面上的吸附形态[J].物理化学学报,1999,15(10):895-899. 被引量:16
  • 10Scamehorn J F,Schechter R S,Wade W H. J Colloid Interface Sci[J],1982,85:463.

二级参考文献11

共引文献27

同被引文献33

  • 1郑宣,程璇.半导体硅片金属微观污染机理研究进展[J].半导体技术,2004,29(8):53-56. 被引量:7
  • 2郑宣,程璇.微量铜-铁对硅片表面污染的初步分析[J].Journal of Semiconductors,2005,26(5):970-976. 被引量:3
  • 3HSIEH D B,TSAI T C,HUANG S F,et al.Characteriza-tion of high-k/metal gate using picosecond ultrasonics[J].Mi-croelectronic Engineerig,2011,88(5):583-588.
  • 4HSIEH Y H,HSU H K,TSAI T C,et al.Process develop-ment of high-k metal gate aluminum CMP at 28 nm technologynode[EB/OL].(2011-04-13)[2011-9-25].http://www.citeulike.org/article/9372039.
  • 5PAUL F.先进CMOS晶体管之金属栅极整合化CMP制程[EB/OL].(2011-06-28)[2011-9-25].http://www.Solid statechina.com/Dezzgy.asp?id=66.
  • 6吴国波.金属材料的腐蚀与防腐措施研究.科海故事博览,2009,(6):207-207.
  • 7Ranch,Gary C.Glass-ceramic substrates for 1Gb/in2 and beyond[J].IEEE Trans on Magn,1996,36,32(5):3642-3647.
  • 8Tsai,Hsiao-chu.Advantage and challenge of nonmetallic substractes for rigid disk application[J].IEEE Trans on Magn,1993,29(1):241-245.
  • 9A Kaller.On the polishing of glass,particularly the precision.polishing of optical surfaces[J].Glass Tech Ber,1991,9:241.
  • 10T Izumitani,S Harada.Polishing mechanism of optical glasses[J].Glass Tech,1971,12:131.

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