摘要
本文重点介绍了0.8μm PD SOI MOS器件的结构、KINK效应、热载流子效应和自加热效应等,并对这些特性从物理机理上进行了简要的阐述。
This article introduces 0.8 μm PD SOI MOS device structure, kink effect, hot-carrier effect and self-heating effect, and gives their physics explanation briefly.
出处
《电子与封装》
2005年第6期35-39,共5页
Electronics & Packaging
