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深槽Ni(Pt)Si/Si肖特基二极管特性研究 被引量：2

The Characteristics of Ni (Pt) Si/Si Schottky Barrier Diode with Deep Trench
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摘要 采用15nmNi/1.5nmPt/15nmNi/Si结构在600～850°C范围内经RTP退火的方法形成Ni(Pt)Si薄膜,其薄膜电阻低且均匀一致。比形成较低电阻率的NiSi薄膜的温度提高了150°C。在850°CRTP退火后形成的Ni(Pt)Si/Si肖特基势垒二极管I-V特性很好,其势垒高度ΦB为0.71eV,改善了肖特基二极管的稳定性。实验表明在肖特基二极管中引入深槽结构,可以大幅度地提高其反向击穿电压。在外延层浓度为5E15cm-3时,深槽器件的击穿电压可以达到80V,比保护环器件高约30V。 In this paper, Ni(Pt)Si film is formed using the structure Ni/Pt/Ni/Si after the RTP, and the sheet resistance of Ni(Pt)Si film is rather low during 600～850~°C . This temperature is 150~°C higher than that of NiSi film. Ni(Pt)Si/Si schottky barrier diode, which goes through 850~°C RTP, has good I-V characteristics. The corresponding Schottky barrier height Φ_B of 0.71 eV is obtained. We think that the film of Ni(Pt)Si has the better stability than NiSi. The experiment shows that the deep trench to replace guard ring in schottkey diode can greatly increase the reverse breakdown voltage of the device. When the impurity concentration in epitaxial substrate is 5E15 cm^-3 , the breakdown voltage of device with deep trench is up to 80 V, while device with guard ring is only 50 V.
作者 张慧 张利春 高玉芝 金海岩
机构地区 北京大学微电子学研究院
出处 《固体电子学研究与进展》 CAS CSCD 北大核心 2005年第2期167-171,230,共6页 Research & Progress of SSE
关键词 肖特基二极管 镍硅 镍(铂)硅 深槽 schottky barrier diode NiSi Ni(Pt)Si deep trench
分类号 TN311.7 [电子电信—物理电子学]
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参考文献7

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二级参考文献18

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共引文献5

同被引文献6

  • 1Xu D X, Das S R, Peters C J, et al. Material aspects of nickel silicide for ULSI applications[J]. Thin Solid Films,1998;326:143-150.
  • 2Lee P S, Pey K L, Mangelinck D, et al. New salicidation technology with Ni(Pt) alloy for MOSFET[J]. IEEE Electron Device Letters,2001;ED-22(12):568-570.
  • 3Liu J F, Chen H B, Feng J Y. Enhanced thermal stability of NiSi films Si(111) substrates by a thin Pt interlayer[J]. Journal of Crystal Growth,2000;220:488-493.
  • 4Lee P S, Mangelnck D. Enhanced stability of Ni monosilicide on MOSFETs poly-Si gate stack[J]. Microelectronic Engineering,2002;60:171-181.
  • 5Wang R N, Feng J Y, Huang Y. Mechanism about improvement of NiSi thermal stability for Ni/Pt/Si(111)bi-layered system[J]. Applied Surface Science,2003;207:139-143.
  • 6陈金凌,高玉芝,张利春.金属保护层改善NiSi/Si肖特基势垒均匀性的研究[J].微电子学,2003,33(2):109-112. 被引量：2

引证文献2

二级引证文献7

固体电子学研究与进展
2005年 第2期

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