摘要
为得到高B值(材料常数)的单晶热敏材料,采用高温气相扩散的方法在n型硅中掺杂深能级杂质Zn,得到高补偿的硅材料,并对该材料特性进行了测试和分析.结果表明:这种补偿硅具有热敏特性,该材料的B值为6300K左右,其阻值对温度的依赖关系与杂质的补偿程度有关.
In order to obtain mono-crystal silicon thermistor material having high B-value,deep energy level impurity Zn is doped into n-type silicon using a high temperature gas phase diffusion method.Highly compensated silicon material is obtained.The characteristics of the material are measured and analyzed.It is shown that the compensated silicon material has thermally sensitive characteristics.The B-constant of the material is about 6300K and the resistance-temperature relationship of the material depends on the compensation degree of impurities.
基金
中国科学院"西部之光"资助项目~~
关键词
深能级杂质
费米能级
多数载流子
补偿度
deep energy level impurity
Fermi level
majority carrier
degree of compensation