蓝宝石衬底上单晶InN外延膜的RFMBE生长

RF-MBE Growth of an InN Epilayer on Sapphire Substrate

采用低温氮化铟(InN)缓冲层,利用射频等离子体辅助分子束外延(RF-MBE)方法在蓝宝石衬底上获得了晶体质量较好的单晶InN外延膜.用光学显微镜观察所外延的InN单晶薄膜,表面无铟滴.InN(0002)双晶X射线衍射摇摆曲线的半高宽为14′;用原子力显微镜测得的表面平均粗糙度为3.3nm;Hall测量表明InN外延膜的室温背景电子浓度为3.3×1018cm-3,相应的电子迁移率为262cm2/(V·s).

InN films with low-temperature InN buffer layer are successfully grown on sapphire substrates by radio-frequency plasma-excited molecular beam epitaxy.No indium droplets on the surface of the grown InN films.Atomic-force-microscopy,reflection high-energy electron diffraction,double-crystal X-ray diffraction (DCXRD),and Raman spectra are used to characterize the InN films.The results show that the InN films have good crystallinity,with full width at half maximum of InN (0002) DCXRD peak of 14″.The room temperature Hall mobility of the films is 262cm2/(V·s).