摘要
提出了背向选区腐蚀生长多孔硅的集成电感衬底结构.ASITIC模拟证明,该新型衬底结构的集成电感在高频下仍具有较高的品质因子.采用此工艺,在固定腐蚀液配比的条件下,变化电流密度和阳极氧化时间,制备出了高质量的厚膜多孔硅,并测量了多孔硅的生长厚度、孔径大小和表面形貌,得出了多孔硅生长速率随阳极氧化时间和电流密度的变化关系,为背向选区腐蚀工艺制备高品质硅基集成电感奠定了理论和实验基础.
A new method to grow porous silicon substrate from the back-end of silicon substrate is presented.High Q integrated inductors can be obtained at high frequencies with this kind of substrate,which has been proved by ASITIC simulator.High quality and thick porous silicon films are fabricated using this new technique.The influence of the velocity of growth ,time and current density on the porous silicon is achieved.The results can serve as a guideline for fabricating high quality integrated inductors based on silicon substrate.
基金
国家自然科学基金资助项目(批准号:60306005)~~
关键词
射频集成电路
多孔硅
集成电感
品质因子
radio frequency integrated circuit
porous silicon
integrated inductor
quality factor
