基于MEMS技术新型硅磁敏三极管负阻-振荡特性

Negative-Resistance Oscillations Characteristics of a New Type Silicon Magnetic Sensitive Transistor on MEMS

介绍了一种新型硅磁电负阻振荡器件———S型负阻振荡硅磁敏三极管.该器件是基于MEMS技术在p型高阻单晶硅片上制作的具有立体结构的新型磁电转换器件,采用KOH各向异性腐蚀技术实现发射区及引线的制作.实验结果表明,集电极电流随外加磁场的变化而变化;在基极注入电流一定时,出现集电极电流受外加偏压VCE调制的负阻振荡特性,且集电极电流振荡随外加磁场而变化.对该器件负阻振荡特性的形成机理进行了讨论,结果表明,在集电区n+π结和基区与π区形成的p+π结均处于反偏条件下,当π区满足雪崩倍增效应产生的条件时,该磁敏三极管伏安特性曲线中的Vp+π偏压相对应的基极注入条件下的集电极电流出现S型负阻振荡特性.在发射极和基极间的n+π结和p+π结附近存在的大量深能级杂质将对负阻振荡特性进行调制.

A new-type silicon magneto-electric negative-resistance oscillations device,S-type negative resistance oscillating silicon magnetic-sensitive transistor,is presented.It is fabricated on face of the p-type silicon with a high resistivity adopting MEMS techniques.It has rectangular structure and is a new-type magneto-electric transform device.Emitter region-groove manufactured by utilizing KOH anisotropic etching techniques.Experiment result shows that the collector current I C varies with magnetic field;when the base injection current is constant,negative-resistance oscillations characteristics are mediated by biased voltage;oscillation of I C varies with changing magnetic field.Further discussi on the principle of negative-resistance oscillations shows,in case of collector n+π junction and p+π formed between base and π regions being biased,and an avalanche multiplication effect occurring in the π region,base injunction occurs corresponding to V p+π biased voltage in the V-I curve of the magnetic-sensitive transistor and the collector current shows S-type negative resistance oscillations characteristics.