p型透明导电的锡镓氧化物薄膜的制备及其表征

Preparation and Characterization of p-type Transparent Conductive Tin-gallium Oxide Films

本文通过磁控溅射锡镓合金靶(Ga/Sn=0.2)及热氧化的方法,成功地制备了p型透明导电的锡镓氧化物(TGO)薄膜。X射线衍射(XRD)测试结果表明,TGO薄膜保持SnO2的金红石结构。吸收谱测试表明TGO薄膜在可见光范围内透过率可达到85%以上,其光学禁带宽度Eg约3.8eV。霍尔效应测试结果表明,TGO薄膜的载流子类型及其浓度与热处理温度密切相关。热氧化温度过高或过低均不利于空穴浓度。当热氧化温度处于(600～700)℃之间时,可以获得p型透明导电的TGO薄膜,最高空穴浓度高达8.84×1018cm-3。

p-type transparent conductive tin-gallium-oxide (TGO) films were successfully prepared on quartz substrates by magnetron sputtering of GaSn alloy (Ga/Sn = 0.2), followed by thermal oxidization. X-ray diffraction results show that TGO films are of rutile structure. UV-visible absorption results show that the optical band-gap of the TGO films is 3.8 eV approximately, and the transmittance of the films is higher than 85% in the visible region. Hall effect measurement shows that hole concentration as high as 8.84 × 1018 cm-3 is achieved, but both the carrier type and the carrier concentration depend on the process temperature.