高迁移率透明导电In_2O_3:Mo薄膜

Growth of High Mobility Transparent Conducting In_2O_3:Mo Thin Film

用直流磁控溅射法成功制备了高价态差掺钼氧化铟(IMO)透明导电薄膜。研究了氧分压,基板温度以及溅射电流对IMO薄膜结构和性能的影响。获得的IMO薄膜的最低电阻率为3.65×10-4Ω·cm,载流子迁移率高达50cm2V-1s-1,可见光区域的平均透射率(含玻璃基底)高于80%。X ray衍射(XRD)研究表明IMO薄膜具有良好的结晶性。分析认为IMO薄膜的载流子迁移率主要受晶界散射的控制。

High mobility molybdenum-doped In2O3 films (IMO) have been grown on the normal glass substrate by DC magnetron sputtering. The effects of oxygen partial pressure, substrate temperature and sputtering current on the optoelectric properties of IMO films were studied. The films with minimum resistivity of 3.65 × 10-4 Ω&middotcm were obtained. The highest carrier mobility is more than 50 cm2 V-1 s-1, while the average visible transmittance, including 1.2-mm-thick glass substrate between 400 nm and 700 nm, is greater than 80%. We found that the films are sensitive to the oxygen concentration in the sputtering environment. X-ray diffraction (XRD) measurements indicate that the films show good crystallinity. The analysis reveals that the high carrier mobility is mainly limited by grain scattering.