利用XPS研究紫外光激发下GaAs晶片表面氧化反应

Studies on GaAs surface oxidation excited by UV light with XPS

本文用XPS分析紫外光激发氧化反应后砷化镓表面的化学组成和氧化层厚度。发现,紫外光激发下,GaAs表面生成氧化膜,同时清除表面污染碳。氧化膜中的镓砷比可以与基体完全保持一致。用此方法获得具有一定的化学稳定性的,适合于器件制备的钝化层。发现紫外光激发的砷化镓表面氧化反应的实质是光催化反应。用“紫外光/臭氧处理法”处理的GaAs晶片。

The oxidation process of GaAs surface were quantitatively investigated using XPS The result shows that the oxide layer was grown on GaAs surface, the polluted carbon was removed after UV/ozone treated The oxide on GaAs surface is made up of Ga 2O 3 and As 2O 3 and the Ga /As atomic ratio close to unity after UV/ozone exposing within 30 minute The thickness of oxide layer can be controlled by the exposing time An effective passivation layer on GaAs was obtained by this method