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高功率980nm垂直外腔面发射激光器(VECSEL)的理论研究 被引量：7

Theoretical analysis of 980 nm high power vertical external cavity surface emitting semiconductor laser (VECSEL)
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摘要 利用周期谐振增益结构设计了以InGaAs/GaAsP/AlGaAs为有源区的980nm二极管泵浦垂直外腔面发射半导体激光器。根据理论模型计算了纵模限制因子、阈值增益、光增益、输出功率等特征参数,优化了激光器特征参数并设计了OPS VECSEL结构。理论计算表明,LD泵浦的垂直外腔面发射激光器的输出功率可大于1.0W。 By using period resonance gain structure, a laser diode (LD) pumped 980 nm vertical external-cavity surface-emitting laser (VECSEL) with active region of InGaAs/GaAsP/AlGaAs system was developed. The longitudinal confinement factor, threshold gain, optical gain and output power were calculated. The characteristic parameters of VECSEL were optimized, and the structure of VECSEL was designed. The results show that the output power of a LD-pumped VECSEL can be larger than 1.0 W based on the theoretical calculations.
作者 何春凤 路国光 单肖楠 秦莉 晏长岭 宁永强 李特 孙艳芳 王立军
机构地区 中国科学院长春光学精密机械与物理研究所
出处 《光学精密工程》 EI CAS CSCD 北大核心 2005年第3期247-252,共6页 Optics and Precision Engineering
基金 吉林省科技厅项目(No.20040519)
关键词 垂直外腔面发射激光器 LD泵浦 纵模限制因子 光增益 High power lasers Optical pumping Optically pumped lasers
分类号 TN248.4 [电子电信—物理电子学]
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参考文献11

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光学精密工程
2005年 第3期

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