摘要
基于MEMS微细加工工艺,利用磁控溅射方法在Si基片上制备了不同Cu层宽度弯曲型三明治结构的FeCuNbCrSiB/Cu/FeCuNbCrSiB多层膜,在频率1～40MHz下研究了Cu层宽度对多层膜的应力阻抗效应的影响。结果表明,弯曲型三明治结构多层膜的应力阻抗(SJ)效应随Cu层宽度的变化有明显的变化,在频率5MHz、基片自由端在y轴方向偏移的距离h为1500μm时,当Cu层宽度为0.4mm时,应力阻抗效应达-25%左右。
Sandwich FeCuNbCrSiB/Cu/FeCuNbCrSiB films of different Cu width with a meander line structure were prepared on silicon substrate by magnetron sputtering and MEMS microfabrication technology. Dependence of Stress-impedance (SI) effects were studied on Cu width in the frequency range of 1MHz～40MHz.Experimental results show that the SI effect is stronger in the sandwich FeCuNbCrSiB/Cu/FeCuNbCrSiB films with a meander line structure in different Cu width, and the maximum SI effect with a value of -25% or so is obtained at 0.4mm Cu width while h reaches 1500μm for a frequency of 5MHz.
出处
《金属功能材料》
CAS
2005年第3期9-12,共4页
Metallic Functional Materials
基金
国家自然科学基金项目(50275096)
上海市纳米专项(0215nm104
0352nm014)。
