掺杂钴对锆钛酸铅铁电薄膜电性能的影响

The Electrical Properties of Cobalt-Modified Lead Zirconate Titanate Ferroelectric Thin Films

采用溶胶-凝胶法在LaNiO3/Si衬底上制备了Pb(Zrx,Ti1-x)O3(PZT)与PbCoy(Zrx,Ti1-x)O3(PC-ZT)铁电薄膜,实验发现钴掺杂对PZT的铁电性能产生了很大的影响.不掺杂的PZT铁电薄膜剩余极化强度Pr=14.05μC/cm2,矫顽场Ec=26.35kV/cm,而钴的掺杂有效地提高了PZT薄膜的剩余极化强度,当掺杂钴达到12%时,Pr=36.26μC/cm2,矫顽场减小.同时,掺杂钴增强了PZT薄膜的介电性能并且减少了漏电流.

By Sol-Gel method, ferroelectric thin films PZT and PCZT are made on the LaNiO_(3)/Si substrates. The result shows that the doping of cobalt has a significant influence on ferroelectric properties of PZT films. For the PZT ferroelectric thin films without cobalt-doping, the remnant polarization P_r is (14.05) μC/cm^2,and the coercive field E_c is 26.35 kV/cm, whereas the value of remnant polarization of PZT with cobalt-doping is considerably increased. When the amount of cobalt is up to 12mol%, P_r is 36.26 μC/cm^2, and the coercive field is decreased. In addition, cobalt-doping has respective effects on the dielectric properties and leakage current properties of PZT films.