摘要
退火纯铝(99.99%)在15%H_2SO_4中于不同电解条件下进行阳极氧化,然后测其正电子湮没寿命谱,寿命谱拟合为三个寿命成份,指认第二寿命成分为e^+在氧化膜中的湮没。从I_2随电解条件的变化推知膜厚与槽压近似成正比,在恒温和固定槽压条件下,膜厚只能达到某极限值。根据τ_2的变化推断出,使用较高槽压或延长电解时间均使膜的结晶度提高,它诱发了裂缝或微洞的形成,导致膜体松散。根据上述结论进一步分析提高膜机械性能的可能途径。
The anodic oxidation of annealed pure aluminium (99.99%) was carried out in 15% H_2SO_4 at different electrolytic conditions. The positron annihilation lifetime spectra of the anodized aluminium were measured and fitted into three lifetime components. The second component(τ_2,Ι_2) was assigned to the positron annihilation in the anodic film. It has been deduced that, from the Ι_2 curves, the film thirkness is propertional to the cell voltage and reaches a limit under constant cell voltage and temperature and that, from the τ_2 curves, the crystallinity of the anodic film increases with increasing cell voltage and anodizing time. The local crystallization in the anodic film would induce the void-like defects and hence resuh in the film less compact.An idea for improvement of mechanic properties of the anodic film on aluminium has been proposed.
出处
《物理化学学报》
SCIE
CAS
CSCD
北大核心
1989年第4期427-431,共5页
Acta Physico-Chimica Sinica
基金
国家自然科学基金