摘要
Silicon (111) and Silicon (100) have been employed for fabrication of TiO_2films by metal organic chemical vapor deposition (MOCVD). Titanium (IV) isopropoxide (Ti[O(C_3H_7)_4]) was used as a precursor. The as-deposited TiO_2 films have been characterized withField emission scanning electron microscopy (FE-SEM), X ray diffraction (XRD) and atomic forcemicroscopy (AFM). The photocatalytic properties were investigated by decomposition of aqueous orangeII. The crystalline and structural propertiesof TiO_2 film had crucial influences on thephotodegradation efficiency. For MOCVD in-situ deposited films on Si substrates, the photoactivitiesvaried following a shape of 'M': At lower (350 °C ) middle (500 °C) and higher (800 °C)temperature of deposition, relative lower photodegradation activities have been observed. At 400 °Cand 700 'C of deposition, relative higher efficiencies of degradation have been obtained, becauseone predominant crystallite orientation could be obtained as deposition at those two temperatures,especially a single anatase crystalline TiO_2 film could be obtained at 700 °C growth.
Silicon (111) and Silicon (100) have been employed for fabrication of TiO_2films by metal organic chemical vapor deposition (MOCVD). Titanium (IV) isopropoxide (Ti[O(C_3H_7)_4]) was used as a precursor. The as-deposited TiO_2 films have been characterized withField emission scanning electron microscopy (FE-SEM), X ray diffraction (XRD) and atomic forcemicroscopy (AFM). The photocatalytic properties were investigated by decomposition of aqueous orangeII. The crystalline and structural propertiesof TiO_2 film had crucial influences on thephotodegradation efficiency. For MOCVD in-situ deposited films on Si substrates, the photoactivitiesvaried following a shape of 'M': At lower (350 °C ) middle (500 °C) and higher (800 °C)temperature of deposition, relative lower photodegradation activities have been observed. At 400 °Cand 700 'C of deposition, relative higher efficiencies of degradation have been obtained, becauseone predominant crystallite orientation could be obtained as deposition at those two temperatures,especially a single anatase crystalline TiO_2 film could be obtained at 700 °C growth.
基金
SupportedbytheFoundationofNationalHigh Tech R&DPlan(863Plan)(2003AA331080)
