期刊文献+

半导体可饱和吸收镜的光损伤阈值测量 被引量:3

Measurement of Damage Threshold of Semiconductor Saturable-Absorber Mirrors
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摘要 半导体可饱和吸收镜(SESAM)在飞秒脉冲激光器锁模中,是一种非常有潜力的锁模启动器.其损伤阈值的高低与连续锁模阈值比较相近,极易损伤,因而研究在飞秒激光作用下SESAM的损伤阈值很有必要.利用飞秒激光分别对单晶硅、自然生长SESAM及腐蚀后SESAM在50fs、200fs和400fs脉宽下进行了表面烧蚀研究,并且保证每次烧蚀的激光脉冲个数为50个.结果发现单晶硅和自然生长SESAM的损伤阈值要高于腐蚀后SESAM,随脉宽的增加而逐渐增大;而腐蚀后SESAM的损伤阈值却随脉宽的增加而逐渐减小. Semiconductor saturable-absorber mirrors(SESAM)are practical device for mode-locking of femtosecond pulses laser.However, the damage threshold of the SESAM is very close to that for continues wave(CW)mode-locking.Therefore, it is very important to measure and to improve the damage threshold.Using femtose-(cond) pulses laser, the damage threshold of them with 50 pulses is measured with a pulse duration of 50 fs, 200 fs and 400 fs respectively.The results show that the damage threshold of Si and SESAM as grown is higher than that of the etched SESAM, and increases with the pulse duration, whereas those for etched SESAM decrease with pulse duration.
出处 《纳米技术与精密工程》 CAS CSCD 2005年第2期142-145,共4页 Nanotechnology and Precision Engineering
基金 国家自然科学基金资助项目(60490280)
关键词 半导体可饱和吸收镜 光损伤阈值 SESAM 飞秒脉冲激光器 测量 自然生长 飞秒激光 激光作用 表面烧蚀 单晶硅 锁模 阈值比 启动器 腐蚀 脉宽 semiconductor saturable-absorber mirrors (SESAM) damage threshold femtosecond pulses laser
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参考文献7

  • 1[1]Keller U, Miller D A B, Boyd G D, et al. Solid-state low loss intracavity saturable absorber for Nd:YLF lasers: An antiresonant semiconductor Fabor-Perot saturable absorber[J]. Opt Lett, 1992, 17(7): 505-508.
  • 2[2]Keller U, Weingarten Kurt J, Kaertner Franz X, et al.Semi-conductor saturable absorber mirrors (SESAM) for femtosecond to nanosecond pulse generation in solid-state lasers[J]. IEEE J Quantum Electron, 1996, 2(3): 435-453.
  • 3赵江山,张志刚,柴路,王清月.半导体可饱和吸收镜中电场的分析和计算[J].中国激光,2003,30(5):401-404. 被引量:1
  • 4[4]Du D, Liu X, Korn G, et al. Laser-induced breakdown by impact ionization SiO2 with pulse widths from 7 ns to 150 fs[J]. Appl Phys Lett, 1994, 64(23): 3 071-3 073.
  • 5[5]Lenzner M, Kruger J, Sartania S, et al. Femtosecond optical breakdown in dielectrics [ J ]. Phys Rev Lett, 1998, 80(18): 4 076-4 079.
  • 6[6]Venkatakrishnan K, Tan B, Stanley P, et al. The effect of polarization on ultrashort-pulsed laser ablation of thin metal films [ J ]. Journal of Applied Physics, 2002, 92(3):1 604-1 607.
  • 7[7]Blair G A, Kamps T, Lewin H, et al. R&D towards a laser based beam size monitor for future linear collider [ A ]. In:Proceedings of EPAC 2002[ C]. Paris, 2002. 1 912-1914.

二级参考文献6

  • 1U .Keller,D .A .B .Miller,G .D .Boydetal.Solid statelow lossintracavitysaturableabsorberforNd∶YLFlasers:AnantiresonantsemiconductorFaborPerotsaturableabsorber[].Optics Letters.1992
  • 2R. Fluck,I. D. Jung,G. Zhang et al.Broadband saturable absorber for 10-fs pulse generation[].Optics Letters.1996
  • 3Z.Zha ng,K.Torizu ka,T.Itatanietal.Broadbandsemiconductorsatur ableabsorbermirrorfora selfstarting modelockedCr∶forsteritelaser[].Optics Letters.1998
  • 4I.J.Mo nzon,T.Y onte,L.I.S anchezsoto.Basicfactoriationformultilayers[].Optics Letters.2001
  • 5ZhangZhigang,ChaiLu,ZhaoJiangshanetal.Semiconductorsat urableabsorbermirrorfo raselfstarti ngmodelockedTi∶sapphirelasers[].ActaOpticaSinica.2002
  • 6H.AngusMacleo d.ThinfilmOpticalFi lter[]..2001

同被引文献26

  • 1蔡志强,温午麒,姚建铨,王勇刚,张志刚,丁欣,周建勇,周佳凝,李君,王鹏.半导体可饱和吸收镜连续被动锁模端面抽运Nd∶YVO_4激光器[J].中国激光,2005,32(6):734-738. 被引量:9
  • 2梁建国,倪晓昌,杨丽,王清月.超短激光脉冲烧蚀铜材料的数值模拟[J].中国激光,2005,32(9):1291-1294. 被引量:13
  • 3倪晓昌,王清月,梁建国.飞秒脉冲参量影响金属表面热特性的研究*[J].光子学报,2006,35(1):1-4. 被引量:11
  • 4LOESEL F H, BROCKHAUS P, FISCHER J P, et al. Femtosecond pulse lasers for nonthermal tissue ablation[C]//Conference on Lasers and Electro-Optics Europe-Technical Digest. 1994:277 - 278.
  • 5TAN B, VENKATAKRISHNAN K.A femtosecond laser-induced periodical surface structure on crystalline silicon [J]. Journal of Micromechanics and Microengineering, 2006, 16 ( 5 ) : 1080 - 1085.
  • 6HWANG D J, GRIGOROPOULOS C P, CHOI Tae Y. Efficiency of silicon micromachining by femto- second laser pulses in ambient air [ J ]. Journal of Applied Physics, 2006,99 ( 8 ) : 083101.
  • 7MATSUMURA T, NAKATANI T, YAGI T. Deep drilling on a silicon plate with a femtosecond laser: Experiment and model analysis[J].Applied Physics A: Materials Science and Processing, 2007,86 (1) :107- 114.
  • 8LIU J,ZHANG Z,LU Z, et al. Fabrication and stitching of embedded multi-layer micro-gratings in fused silica glass by fs laser pulses[J].Applied Physics B:Lasers and Optics,2006,86 (1) :151 - 154.
  • 9WECK A, CRAWFORD T H R, BOROWIEC A, et al. Femtosecond laser-based fabrication of a new model material to study fracture [ J ] . Applied Physics A: Materials Science and Processing, 2007,86 (1) :55-61.
  • 10LEE S, BORDATCHEV E V, Zeman M J F, Femtosecond laser micromachining of polyvinylidene fluoride ( PVDF ) based piezo films [J]. Journal of Micromechanics and Microengineering 2008, 18:045011 - 045019.

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