SiC-C/SiC复合材料进行硼离子注入的工艺研究

Technological research on boron ion-implanted SiC-C/SiC composites

叙述采用等离子体源离子注入法(PSII),对带有SiC涂层的C纤维增强SiC基(SiC-C/SiC)复合材料进行硼离子注入的工艺研究。通过朗缪尔单探针测量了等离子的密度,对注入剂量进行了估算。对复合材料采用加金属网的工艺,来提高离子注入能量。用俄歇电子能谱检测分析了加金属网与未加金属网样品硼离子的成分深度分布。证明了加金属网工艺可以有效改善不良导体的注入效果。在空气中1300℃的高温条件下进行了氧化实验,实验结果说明对SiC-C/SiC复合材料注入硼有助于提高其抗氧化性能。

PSII(plasma source ion implantation) process was applied to the boron ion-implanted C/SiC composites with SiC coating and investigated technologically, of which the plasma density was measured by Langmuir single probe with the dosage of implantation estimated. To enhance the energy of implanting ions, a metal net was applied to the samples. The Auger electron spectroscopy result showed that the implantation effect of poor conductor can be improved by the metal net as indicated by the depth profile of the boron ions in samples. Oxidation tests were also performed on the SiC-C/SiC composites in flowing dry air at 1300℃ and the results showed that the composites with boron ion implantation exhibit better resistance to oxidation than those without boron ion implantation.