摘要
研究了高价Mg^(2+),Zn^(2+)等离子对层状结构阴极如V_2O_,MoS_,等的固态电化学插入。用X射线衍射(XRD),电子探针微区分析(EMP),电子自旋共振(ESR)和X射线光电子能谱(XPS)等物理方法研究了相应高价离子对层状阴极插入引起的相变及其插入化合物,对高价离子的插入机理进行了探讨。
The study on solid electrochemistry of insertion of high-valence cations such as Mg(2+), Zn(2+) etc. into the layered material such as V2O5, MoS2 is carried out. The insertion compounds are investigated by a lot of physical techniques such as XRD, EMP, ESR. The mechanism of insertion is disscussed.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
1989年第3期458-465,共8页
Acta Physica Sinica
基金
国家自然科学基金