期刊文献+

N离子注入非晶碳膜的CN成键研究

Formation of CN Bonds in the Amorphous Carbon Filmby N-Implantation
下载PDF
导出
摘要 利用Raman和XPS研究N离子注入前后非晶碳膜化学键合的变化及CN成键情况. 结果表明, 被注入到非晶碳膜内的N与C原子结合, 形成sp3 CN, sp2 CN和C≡N键. 随着N离子注入剂量的增加, 膜内sp3 CN键的含量相对增多, 表明N离子注入更有利于sp3CN键的形成. N-implantation into amorphous carbon films with different doses was carried out to study the formation of CN bonding. Raman and XPS spectra were used to characterize the chemical bonding of CN bonds in amorphous carbon films after N-implantation. The results show that N atoms implanted into amorphous carbon films are bound to C atoms by different bonding types of sp 3 CN, sp 2 CN and C≡N in the films. When N-implantation dose increases, the relative content of sp 3 CN bonds increases, which is more than those of other types of CN bonds in the films. It indicates that N-implantation is favorable to the formation of sp 3 CN bonds.
出处 《吉林大学学报(理学版)》 CAS CSCD 北大核心 2005年第3期324-327,共4页 Journal of Jilin University:Science Edition
基金 国家 863项目基金(批准号: 50372024)
关键词 N离子注入 非晶碳膜 磁控溅射 键合结构 N-implantation amorphous carbon film magnetron sputtering chemical bonding structure
  • 相关文献

参考文献7

  • 1Markwitz A,Baumann H,Grill W,et al.Investigations of Ultrathin Silicon Nitrogen Layers Produced by Low-energy Ion Implantation and EB-RTA [J].Nucl Instr and Meth,1994,B89:362-365.
  • 2Markwitz A,Baumann H,Krimmel E F,et al.Chemical Binding and Interface Analysis of Ultrathin Silicon-nitride Layers Produced by Ion Implantation and Electron Beam Rapid Thermal Annealing (EB-RTA) [J].Appl Phys A,1994,59:435-438.
  • 3Cao P J,Zheng W T,Jiang Z G,et al.Bonding Structure of CNx Films Synthesized by Nitrogen Implantation into Diamond Films [J].Mater Chem Phys,2001,72:93-96.
  • 4Hoffman A,Gouzman I.Possibility of Carbon Nitride Formation by Low-energy Nitrogen Implantation into Graphite:in Situ Electron Spectroscopy Studies [J].Appl Phys Lett,1994,64:854-856.
  • 5李哲奎,李俊杰,金曾孙,吕宪义,白晓明,郑冰,田宏伟,于狭升.在不同退火温度下射频磁控溅射CN_x膜的电子场发射性质[J].吉林大学学报(理学版),2005,43(2):182-184. 被引量:1
  • 6Beeman D,Lynds R,Anderson M R.Modeling Studies of Amorphous Carbon [J].Phys Rev,1984,B30:870-875.
  • 7Zheng W T,Sjostrom H,Ivanov I,et al.Reactive Magnetron Sputter Deposited CNx:Effects of N2 Pressure and Growth Temperature on Film Composition,Bonding,and Microstructure [J].J Vac Sci Technol,1996,A14:2696-2701.

二级参考文献4

  • 1LI Jun-jie, ZHENG Wei-tao, JIN Zeng-sun, et al. Electron Field Emission of RF Magnetron Sputtered CN, Films Annealed at Different Temperature [J]. J Vac Sci Technol, 2003, B21(6) : 2382-2387.
  • 2ZHENG Wei-Tao, XING K Z, Hellgren N, et al. Nitrogen ls Electron Binding Energy Assignment in Carbon Nitride Thin Films with Different Structures [ J ]. J Electron Spectroscopy Relat Phenom, 1997, 87 : 45-49.
  • 3Satyanarayana B S, Ham A, Miline W T, et al. Field Emission from Tetrahedral Amorphous Carbon [ J ]. Diamond Relat Mater, 1998, 7: 656-659.
  • 4孙文斗,顾广瑞,孙龙,李全军,李哲奎,盖同祥,赵永年.基底温度对氮化硼薄膜场发射特性的影响[J].吉林大学学报(理学版),2004,42(2):251-254. 被引量:2

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部