摘要
本文报道了应用射频反应溅射法制备a-GeN_x和a-GeN_x:H薄膜的工艺条件及其基本的光电特性,并报道了它的IR和Raman特性,讨论了掺氮对a-GeN_x:H膜带尾态ΔE,IR谱及Raman谱的影响。
Technological conditions and basic photoele tronic properties of a-GeNx and a-GeNz:H films prepared by an rf-reactive sputtering method are reported. The IR and Raman specrta are presented. The effects of N content on AE and IR and Raman spectra of a-GeNz:H film are also discussed.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
1989年第4期573-578,共6页
Acta Physica Sinica
