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生产验证的临时键合与解键合设备及技术(英文) 被引量:1

Production Proven Temporary Bonding and De-Bonding Equipment and Technology
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摘要 化合物半导体材料的应用经历了稳定的增长,尤其是在光电子产业中更为典型。这些材料的应用要求在封装之前需将衬底减薄到100μm以下。由于这种材料的易碎性,需要某种支持方式来通过各种工序对衬底进行处理。半导体行业中建造这种支持最公认的方法是临时固定这种衬底材料到刚性载体基底上。介绍了一种用全自动方式固定和解固定这类衬底的技术。通过采用各种中间基底,包括热和紫外光释放的能够预先准备和薄片状的全自动化干式黏性膜。200mm直径的这种衬底可以以片盒到片盒的方式键合到晶圆平面的这种载体上。本工艺中选用了一种保护性涂层到衬底上。一旦这种衬底固定后,便可以完成随后的减薄、通孔印刷等工序。当这种衬底被减薄和背面处理之后,第二道加工便用于从载体上解键合该衬底,再次以片盒到片盒的方式将其固定到划版的薄膜或类似的载体上。 The utilization of compound semiconductor materials has been steadily increasing, especially in the optoelectronics industry. Application of these materials typically requires the substrates to be greatly thinned below 100 μm prior to packaging. Due to the fragility of these substrate materials, some form of support is required for handling throughout the various process steps. The most established way in semiconductor industry to create such support is the temporary mounting of those materials to rigid carrier substrates. This paper introduces a well-proven method of mounting and de-mounting these substrates in a fully automated manner. Through the use of various intermediate substances, including thermal and UV release dry-adhesive films, which can also be prepared and laminated fully automated, the substrates up to 200mm can be bonded to the carriers at wafer level in a cassette-to-cassette manner, optionally applying a protective coating to the substrate in the process. Once the substrates are mounted, further processing steps, such as thinning, via printing, etc., can be performed. Once the substrate has been thinned and backside processed, a second process is being used to de-bond the substrate from the carrier, mounting it to a dicing film or similar carrier solutions, again in a cassette-to cassette manner.
机构地区 EV Group
出处 《电子工业专用设备》 2005年第5期33-40,共8页 Equipment for Electronic Products Manufacturing
关键词 晶圆减薄 临时键合 解键合 干式膜层压 Wafer Thinning Temporary bonding De-bonding. Dry-film Laminativn
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  • 1P.J. Taylor, W.A. Jesser, J.D.Benson, M. Martinka, J.H.Dinan, J. Bradshaw, M. Lara-Taysing, R.P. Leavitt, G.Simonis, W.Chang, W.W. Clarck Ⅲ and K.A. Bertness, J.of Appl. Phys. 89, 4365 - 4375, 2001.

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