摘要
用射频磁控溅射法制备了Si/SiO2薄膜,利用Au/(Si/SiO2)/p-Si结构的I-V特性曲线对其输运机制进行了分析。结果表明,在较高的正向电场下,载流子主要是以电场协助隧穿(Fowler-Nordheim隧穿)方式通过氧化层,而在低场范围内和反向电场下,电流的产生则以热电子发射的方式为主。
The Si/SiO2 films were fabricated using the R.F magnetron sputtering technique. Carrier transport mechanism in Au/(Si/SiO2)/p-Si structure was studied using its I-V curves. The result indicated that carrier crossed silicon oxide films by the Fowler-Nordheim tunneling model at a high bias voltage. But at a low bias voltage, the current are induced by thermal electron emission.
出处
《电子元件与材料》
CAS
CSCD
北大核心
2005年第7期56-57,60,共3页
Electronic Components And Materials
基金
国家自然科学基金资助项目(60276015)
教育部科学技术研究项目(204139)
关键词
半导体技术
射频磁控溅射
I-V特性
电场协助隧穿
semiconductor technology
R.F magnetron sputtering
I-V properties
Fowler-Nordheim tunneling