摘要
在LiNbO3 中掺进In2O3 和Nd2O3,以Czochralski技术生长了In∶Nd∶LiNO3 晶体通过光斑畸变法测得In∶Nd∶LiNbO3晶体的光损伤阈值为1. 98×104W /cm2,比Nd∶LiNbO3晶体的1. 6×102W /cm2高两个数量级以上;晶体吸收光谱的测试表明,In∶Nd∶LiNbO3 晶体的吸收边相对Nd∶LiNbO3 晶体发生紫移研究了In∶Nd∶LiNbO3 晶体的倍频性能,结果表明,In∶Nd∶LiNbO3 晶体的相位匹配温度在室温附近,倍频转换效率比Nd∶LiNbO晶体提高二倍.
In:Nd:LiNbO3 crystals were grown by Czochralski method with In2O3 and Nd2O3 as dopants. The optical damage resistance ability of In:Nd:LiNbO3 crystal was investigated by light spot distortion method and the photorefractive threshold of In:Nd:LiNbO3 measured is 1.98 × 10 W/cm2, two order of magnitude higher than that of Nd:LiNbO3 crystal, 1.6 × 102 W/cm2. The structure of the crystals was measured by ultraviolet-visible absorption spectra. The results show that the absorption edge shifted to the ultraviolet band. The double - frequency property of In:Nd:LiNbO3 crystal was measured. The results indicate that the SHG conversation efficiency of In:Nd:LiNbO3 crystals was twice higher than that of Nd-doped LiNbO3 crystals and the phase matching temperature was near room temperature.
出处
《光子学报》
EI
CAS
CSCD
北大核心
2005年第5期778-780,共3页
Acta Photonica Sinica
基金
973项目(G19990330)
863项目(8632001AA31304)资助