摘要
本文提出了一种计算多层介质中注入离子深度分布的新方法。该方法把Monte Carlo模拟与输运方程的数值解法相结合,取其各自的优点,考虑了离子在界面处的反射,给出多层介质中射程分布表达式。理论与实验比较表明,两者符合得很好。
In this paper, we present a new method for calculation of depth profiles of implanted ions in multilayer materials. It combines the Monte Carlo simulation method with the method of numerical solution of the LSS transport equation. Taking into account the reflection of the ions at the interfaces of the layers the analytical expression of the range distribution in the multilayer materials is obtained. The comparison between the theoretical and the experimental results is made and good agreement is shown.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
1989年第7期1111-1121,共11页
Acta Physica Sinica
基金
国家自然科学基金
