SiO_2上共溅射W-Si薄膜退火后的X射线衍射研究

X-RAY DIFFRACTION INVESTIGATION FOR ANNEALING OF Co-SPUTTERED w-si FILMS ON sio_2

用一个W-Si混合靶源,以直流磁控溅射在SiO_2上共溅射一层W-Si薄膜后,进行500—1000℃,15s的真空快速热退火,发现薄层电阻随退火温度出现一反常的极大值。用转靶X射线衍射研究分析了这一反常现象。在直至1100℃高温退火的样品中发现薄膜中存在W_5Si_3。它对薄层电阻有一定的贡献。

Tungsten-silicon films were deposited on oxidized silicon wafers by direct current magnetron Co-sputtering from a W-Si mixture target. Films were then rapid thermal annealed in vacuum at temperature between 500 and 1000℃ for 15 s. The sheet resistance of W-Si films as a function of the annealing temperature shows an anomalous maximum. This phenomenon has been studied by using XRD. We observed that there were W_5Si_3 appeared in the annealed films at temperature up to 1100℃, which contributed partly to the sheet resistance.