硅掺杂和硅钒共掺杂对TiO_2光催化性能的影响

INFLUENCE OF SILICON DOPING AND SILICONVANADIUM CO-DOPING ON PHOTOCATALYST PROPERTY OF TiO_2 THIN FILMS

采用溶胶凝胶法在玻璃表面制备了一定厚度(约120nm)的掺硅TiO2薄膜,在配制原始溶液时,所用钛酸四丁酯、正硅酸乙酯、乙醇、水和硝酸的摩尔比为1∶y∶25∶1∶0.2。用扫描电子显微镜观察其表面形貌,用X射线衍射表征其结构。以甲基橙溶液为体系,考察掺杂后TiO2薄膜的光催化性能。结果表明:当y≤0.3时,随硅掺入量的增加,TiO2薄膜的光催化性能提高;当y>0.3时,硅的掺入使TiO2薄膜的光催化性能降低。另外,用相同方法制备了钒硅共掺杂的TiO2薄膜,发现钒硅共掺杂可以进一步提高TiO2的光催化性能。

Silicon doped TiO2 thin films with a thickness of about 120 nm were prepared on glass substrate by the sol-gel method. The molar ratio of butyl titanate, ethylor thosilicate, ethanol, water and nitric acid, that are used as raw materials in the sol-gel process, is 1:y:25:1:0.2. Scanning electron microscopy and X-ray diffraction were used to investigate the microstructure and crystallization behavior of the thin film. The photocatalysis of TiO2 thin film obtained was investigated in a methyl orange aqua system. The results show that when the doping amount y is equal to or less than 0.3 the photocatalysis is enhanced with the increase of doping amount. However when y value is greater than 0.3 the photocatalysis decreases. TiO2 thin films codoped with silicon-vanadium were prepared by the same method as silicon-doped TiO2 thin films. It is found that codoping can further enhance the photocatalysis properties of TiO2 thin films.