摘要
本文用分区的方法,得到了在同时计及位错应力场和辐照效应的情况下,位错周围点缺陷分布函数的零级、一级和二级近似解,进而得到了偏吸率。利用所得的偏吸率及文献[1]的结果,给出了新的肿胀公式。新公式优于前人的理论,不仅理论本身自洽,而且与实验符合较好。
Approximate concentration distributions of point defects around a dislocation in irradiated material are obtained by dividing the region near the dislocation into two parts in which some definite approximations are used. Then dislocation biasfactor for interstitials is determined, the value of the factor is less than the previous one by 20-50%. As a result, a formula of swelling due to void growth in irradiated materials is obtained, it agrees with experimental data reasonably.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
1989年第9期1454-1466,共13页
Acta Physica Sinica
基金
国家教委博士点基金
