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SOI压力传感器的发展 被引量:1

The Development of SOI Pressure Transducer
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摘要 介绍了全SOI工艺和局部SOI工艺的原理、制作过程、特点和应用范围,叙述了SOI压力传感器的发展趋势,重点对SDB、SFB、SOS、SOZ、SIMOX、ZMR等压力传感器的工艺结构、主要技术性能、应用特点等作了较全面的分析,从而得出具有较广阔应用前景的结论. The principle, fabrication process, features andapplication scope of full SOI and partial SOItechniques are introduced. The developing trend ofSOI pressure transducer is described and theprocedure structure, major specification, applicationfeatures of SDB, SFB, SOS, SOZ,SIMOX, ZMRpressure transducers are analyzed emphatically. Theconclusion of prospective application of the transduc-ers is obtained.
作者 白韶红
出处 《自动化仪表》 CAS 北大核心 1994年第10期1-5,共5页 Process Automation Instrumentation
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